The carbon vacancy related EI4 defect in 4H-SiC
نویسندگان
چکیده
Electron paramagnetic resonance (EPR) was used to study high-purity semi-insulating 4H-SiC irradiated with 2 MeV electrons at room temperature. The EPR signal of the EI4 defect was found to be dominating in samples irradiated and annealed at ~750°C. Additional large-splitting Si hyperfine (hf) lines and also other C and Si hf structures were observed. Based on the observed hf structures and annealing behaviour, the complex between a negative carbon vacancycarbon antisite pair (VCCSi) and a distance positive carbon vacancy ( C V ) is tentatively proposed as a possible model for the EI4 defect.
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